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 BAS125-07W
Silicon Schottky Diode
3
For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage

4
2 1
4 3 1 2
EHA07008
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAS125-07W
Maximum Ratings Parameter Diode reverse voltage Forward current
Marking 17s 1 = C1
Pin Configuration 2 = C2 3 = A2 4 = A1
Package SOT343
Symbol VR IF IFSM Ptot Tj Tstg
Value 25 100 500 250 150 -55 ... 150
Unit V mA mW C
Surge forward current (t 100s) Total power dissipation, TS = 96 C Junction temperature Storage temperature
Maximum Ratings Junction - soldering point1) RthJS
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-16-2001
BAS125-07W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA
AC characteristics Diode capacitance VR = 0 V, f = 1 MHz
Rf
Unit max. nA
typ.
IR VF 385 530 800 400 650 950 100 150
mV
CT
-
16
1.1 -
pF
IF = 5 mA, f = 10 kHz
2
Aug-16-2001
Differential forward resistance
BAS125-07W
Forward current IF = f (VF )
TA = Parameter
10 2
BAS 125... EHD07115
Total power dissipation Ptot = f(TS)
100
mA
F
mA
80
10
1
10 0
TA = -40C 25 C 85 C 150 C
70
IF
60 50 40 30 20 10
10 -1
10 -2 0.0
0.5
V VF
1.0
0 0
15
30
45
60
75
90 105 120 C
150
TS
Reverse current IR = f (VR )
TA = Parameter
10 1
BAS 125... EHD07116
Differential forward resistance rf = f (IF) f = 10 kHz
10 4 rf 10 3
BAS 125...
EHD07118
R
A 10 0
TA = 125 C
TA = 85 C
10 -1
10 2
10 -2
TA = 25 C
10 1
10 -3
0
10
V VR
20
10 0 10 -2
10 -1
10 0
10 1 mA
10 2
F
3
Aug-16-2001
BAS125-07W
Diode capacitance CT = f (VR)
f = 1MHz
BAS 125... EHD07117
1.0 CT pF 0.8
0.6
0.4
0.2
0.0
0
10
V VR
20
4
Aug-16-2001


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